Wednesday 17 march 2010
3
17
/03
/Mar
/2010
03:39
Tokyo Institute of Technology University professor Makoto Nagai small study group, a substantial increase in quantum dots using silicon solar cell open voltage (Voc) and the IV characteristics of
shape factor (FF) values. March 10, 2010, the message is in the application of physics to be held in the spring of 2010, Applied Physics Scientific Meeting of the pre-announced at a news
conference.
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Quantum dots mean particle size of about 10nm semiconductor particles. Only the particle location will appear as the same band-gap hole. For it can control the band gap by changing the size of the
particle size, so easy to form a multi-junction solar cell.
Konagai Research Group has been studying the use of silicon quantum dots arranged the formation of solar cell components. Reason for using silicon because of its good use of plasma CVD-volume
manufacturing methods. However, electricity had not received the expected features.
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This time, a small study group Nagai industry, government and university cooperation fellow black Chuan Kang-liang announced that through the silicon quantum dots in the surrounding layer of
amorphous SiC to add oxygen, to prevent the crystallization of SiC and so on, components of the Voc and FF values were reached 518mV and 0.51. Alleged that after the silicon quantum dot solar
cells, University of New South Wales, Australia (New South Wales University), Professor M. Green group released the highest value of Voc = 492mV. "Our goal is to achieve 700 ~ 1000mV" (Kurokawa).
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FF value is smaller than before the study group 0.25 Nagai substantial increase, if not consider the short-circuit current Isc only 0.338mA/cm2 this point, IV curves show the characteristics and
solar cell properties was near. "Isc estimate is smaller because the current drain to replace the transparent electrode of the n-type crystalline silicon layer" (Kurokawa).
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